Slow-Wave Substrate Integrated Waveguide

This paper describes a new concept of substrate integrated waveguide (SIW): a slow-wave substrate integrated waveguide (SW-SIW). Compared to a conventional SIW, the proposed topology requires a double-layer substrate with a bottom layer including internal metallized via-holes connected to the bottom...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 62; no. 8; pp. 1625 - 1633
Main Authors Niembro-Martin, Alejandro, Nasserddine, Victoria, Pistono, Emmanuel, Issa, Hamza, Franc, Anne-Laure, Vuong, Tan-Phu, Ferrari, Philippe
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.08.2014
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:This paper describes a new concept of substrate integrated waveguide (SIW): a slow-wave substrate integrated waveguide (SW-SIW). Compared to a conventional SIW, the proposed topology requires a double-layer substrate with a bottom layer including internal metallized via-holes connected to the bottom conductive plane. The slow-wave effect is obtained by the physical separation of electric and magnetic fields in the structure. Electromagnetic simulations show that this topology of SIW allows decreasing the longitudinal dimension by more than 40% since the phase velocity is significantly smaller than that of a classical SIW. Simultaneously, the lateral dimension of the waveguide is also reduced. By considering a double-layer technology, SW-SIWs exhibiting a cutoff frequency of 9.3 GHz were designed, fabricated, and measured. The transversal dimension and the phase velocity of the proposed SW-SIW are both reduced by 40% as compared to a classical SIW designed for the same cutoff frequency, leading to a significant surface reduction. Moreover, an original kind of taper is proposed to achieve a good return loss when the SW-SIW is fed by a microstrip transmission line.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2014.2328974