A 1-μm-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth

• Published in: Sensors (Basel, Switzerland) Vol. 22; no. 23; p. 9239
• Main Authors: Chen, Jia-Qi, Chen, Chao, Guo, Qi, Qin, Li, Zhang, Jian-Wei, Peng, Hang-Yu, Zhou, Yin-Li, Sun, Jing-Jing, Wu, Hao, Yu, Yong-Sen, Ning, Yong-Qiang, Wang, Li-Jun
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 28.11.2022; MDPI
• Subjects: apodized fiber Bragg grating; Bragg gratings; Femtosecond; Frequency locking; frequency noise; Injection locked semiconductor lasers; Laser applications; Lasers; Morphology; narrow linewidth; Optical feedback; Power spectra; Quantum dots; semiconductor laser; Semiconductors; side-mode suppression ratio; China; frequency noise; semiconductor laser; apodized fiber Bragg grating; narrow linewidth; side-mode suppression ratio
• ISSN: 1424-8220; 1424-8220
• DOI: 10.3390/s22239239

We demonstrate a narrow-linewidth, high side-mode suppression ratio (SMSR) semiconductor laser based on the external optical feedback injection locking technology of a femtosecond-apodized (Fs-apodized) fiber Bragg grating (FBG). A single frequency output is achieved by coupling and integrating a wide-gain quantum dot (QD) gain chip with a Fs-apodized FBG in a 1-μm band. We propose this low-cost and high-integration scheme for the preparation of a series of single-frequency seed sources in this wavelength range by characterizing the performance of 1030 nm and 1080 nm lasers. The lasers have a maximum SMSR of 66.3 dB and maximum output power of 134.6 mW. Additionally, the lasers have minimum Lorentzian linewidths that are measured to be 260.5 kHz; however, a minimum integral linewidth less than 180.4 kHz is observed by testing and analyzing the power spectra of the frequency noise values of the lasers.