Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires

We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter ≈ 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with n...

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Bibliographic Details
Published inNanotechnology Vol. 22; no. 18; p. 185201
Main Authors Boyd, Erin E, Storm, Kristian, Samuelson, Lars, Westervelt, Robert M
Format Journal Article
LanguageEnglish
Published England IOP Publishing 06.05.2011
Subjects
Engineering and Technology
Nano Technology
Nanoteknik
Teknik
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Summary:We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter ≈ 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy.
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/18/185201