Characterization of deep levels in modulation-doped AlGaAs/GaAs FET's

• Published in: IEEE electron device letters Vol. 4; no. 10; pp. 360 - 362
• Main Authors: Valois, A.J., Robinson, G.Y.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.10.1983; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Electron traps; Electronics; Epitaxial layers; Exact sciences and technology; FETs; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Pulse measurements; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Spectroscopy; Threshold voltage; Transistors; Gallium Arsenides; Field effect transistor; Operation study; Deep level transient spectrometry; Characteristic; Aluminium Gallium Arsenides Mixed; Deep level
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/EDL.1983.25763

Deep levels in modulation-doped field-effect transistors (MODFET's) fabricated from MBE-grown AlGaAs/GaAs heterostructures, have been characterized by a modified deep-level transient spectroscopy (DLTS) technique. Assuming donor-like traps in the AlGaAs layer, it is shown that the threshold voltage V t varies exponentially with time under pulsed-biased conditions. This result is verified experimentally by observing the transient in the drain current I D in long-gate FET's biased in saturation. The resulting Δ √{I_{D}} DLTS spectrum reveals an electron trap with an activation energy of 0.472 eV in Si-doped Al 0.3 Ga 0.7 As.