Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates

• Published in: Journal of crystal growth Vol. 383; pp. 84 - 94
• Main Authors: Bosi, Matteo, Attolini, Giovanni, Negri, Marco, Frigeri, Cesare, Buffagni, Elisa, Ferrari, Claudio, Rimoldi, Tiziano, Cristofolini, Luigi, Aversa, Lucrezia, Tatti, Roberta, Verucchi, Roberto
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.11.2013; Elsevier
• Subjects: A1. Atomic force microscopy; A1. Characterization; A1. X-ray diffraction; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon compounds; Buffer layers; Buffers; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Heating; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Optimization; Physics; Ramps; Silicon; Silicon carbide; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Voids; A1. Atomic force microscopy; A1. Characterization; B2. Semiconducting silicon compounds; A1. X-ray diffraction; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; Buffer layer; Atomic force microscopy; Cubic lattices; Crystal defects; Epitaxy; Crystallinity; XRD; Heat treatments; Optimization; Carbonization; Voids; Silicon compounds; CVD; Interfaces; Silicon carbide; Growth mechanism
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2013.08.005

A procedure for the optimization of a 3C–SiC buffer layer for the deposition of 3C–SiC/(001) Si is described. After a standard carbonization at 1125°C, SiH4 and C3H8 were added to the gas phase while the temperature was raised from 1125°C to the growth temperature of 1380°C with a controlled temperature ramp to grow a thin SiC layer. The quality and the crystallinity of the buffer layer and the presence of voids at the SiC/Si interface are related to the gas flow and to the heating ramp rate. In order to improve the buffer quality the SiH4 and C3H8 flows were changed during the heating ramp. On the optimized buffer no voids were detected and a high-quality 1.5μm 3C–SiC was grown to demonstrate the effectiveness of the described buffer. •A procedure for the optimization of a 3C–SiC buffer layer for the deposition of 3C–SiC/(001) Si is presented.•Buffer layer quality and voids at interface depends on the gas flow and heating ramp rate. Lower ramp heating rate yield the best results.•On the optimized buffer very few density of voids were detected.•High-quality 1.5μm 3C–SiC was grown to demonstrate the effectiveness of the described buffer.