Highly Aligned Porous Silicon Carbide Ceramics by Freezing Polycarbosilane/Camphene Solution
We fabricated highly aligned porous silicon carbide (SiC) ceramics with well‐defined pore structures by freezing a polycarbosilane (PCS)/camphene solution. In this method, the solution prepared at 60°C was cast into a mold at temperatures ranging from 20° to −196°C, which resulted in a bicontinuous...
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Published in | Journal of the American Ceramic Society Vol. 90; no. 6; pp. 1753 - 1759 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Malden, USA
Blackwell Publishing Inc
01.06.2007
Blackwell Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | We fabricated highly aligned porous silicon carbide (SiC) ceramics with well‐defined pore structures by freezing a polycarbosilane (PCS)/camphene solution. In this method, the solution prepared at 60°C was cast into a mold at temperatures ranging from 20° to −196°C, which resulted in a bicontinuous structure, in which each phase (camphene or PCS) was interconnected in a regular pattern. After the removal of the frozen camphene network, the samples showed highly porous structures, in which long straight and short elongated pore channels were formed parallel and normal to the direction of freezing, respectively. Thereafter, porous SiC ceramics were produced by the pyrolysis of the porous PCS objects at 1400°C for 1 h in a flowing Ar atmosphere, while preserving their mother pore structures having aligned pore channels. |
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Bibliography: | ArticleID:JACE01703 ark:/67375/WNG-ZV4LQP83-H istex:20A40D283E217D13EEC4746DD888978E1E8106BE * Member, The American Ceramic Society. This research was supported by a grant (code no.: 05K1501‐01510) from the “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Science and Technology, Korea. H. Du—contributing editor ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/j.1551-2916.2007.01703.x |