Synthesis of Ti–Al–Si–N nanocomposite films using liquid injection PECVD from alkoxide precursors
A series of nitride films of the Ti–Al–Si system have been synthesized at about 750 °C using the liquid injection plasma-enhanced chemical vapor deposition technique from corresponding alkoxide precursors. The composition and structure of the films were characterized by X-ray photoelectron spectrosc...
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Published in | Acta materialia Vol. 54; no. 8; pp. 2041 - 2048 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Ltd
01.05.2006
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | A series of nitride films of the Ti–Al–Si system have been synthesized at about 750
°C using the liquid injection plasma-enhanced chemical vapor deposition technique from corresponding alkoxide precursors. The composition and structure of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning and transmission electron microscopy. Amorphous SiN
x
and crystalline AlN and TiN films were formed in their individual cases, while the SiN
x
-containing (Ti/Al)Si–N composite films showed a two-phase microstructure consisting of amorphous SiN
x
matrix and embedded TiN, AlN, or TiAlN nanocrystals. The Si-rich nanocomposite films demonstrated superior high-temperature oxidation resistance. After two hours of air exposure at 900
°C, no elemental segregation was observed in the nitride films and their structures remained basically unaffected. The fundamental mechanism is discussed in terms of the chemically high inertness of amorphous SiN
x
interfacial phase and thereby the high thermal stability of the composite nitride films with unique nanostructures. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1359-6454 1873-2453 |
DOI: | 10.1016/j.actamat.2005.12.034 |