Synthesis of Ti–Al–Si–N nanocomposite films using liquid injection PECVD from alkoxide precursors

A series of nitride films of the Ti–Al–Si system have been synthesized at about 750 °C using the liquid injection plasma-enhanced chemical vapor deposition technique from corresponding alkoxide precursors. The composition and structure of the films were characterized by X-ray photoelectron spectrosc...

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Bibliographic Details
Published inActa materialia Vol. 54; no. 8; pp. 2041 - 2048
Main Authors Li, Y.S., Shimada, S., Kiyono, H., Hirose, A.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.05.2006
Elsevier Science
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Summary:A series of nitride films of the Ti–Al–Si system have been synthesized at about 750 °C using the liquid injection plasma-enhanced chemical vapor deposition technique from corresponding alkoxide precursors. The composition and structure of the films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning and transmission electron microscopy. Amorphous SiN x and crystalline AlN and TiN films were formed in their individual cases, while the SiN x -containing (Ti/Al)Si–N composite films showed a two-phase microstructure consisting of amorphous SiN x matrix and embedded TiN, AlN, or TiAlN nanocrystals. The Si-rich nanocomposite films demonstrated superior high-temperature oxidation resistance. After two hours of air exposure at 900 °C, no elemental segregation was observed in the nitride films and their structures remained basically unaffected. The fundamental mechanism is discussed in terms of the chemically high inertness of amorphous SiN x interfacial phase and thereby the high thermal stability of the composite nitride films with unique nanostructures.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1359-6454
1873-2453
DOI:10.1016/j.actamat.2005.12.034