Techniques for the Investigation of Segmented Sensors Using the Two Photon Absorption-Transient Current Technique

• Published in: Sensors (Basel, Switzerland) Vol. 23; no. 2; p. 962
• Main Authors: Pape, Sebastian, Currás, Esteban, Fernández García, Marcos, Moll, Michael
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 14.01.2023; MDPI
• Subjects: Collaboration; Electric fields; Investigations; Laser beams; Lasers; Monte Carlo Method; Phantoms, Imaging; Photon absorption; Photons; Radiometry - methods; Sensors; Silicon; silicon detectors; solid state detectors; Strip; Transient current; transient current technique; two photon absorption-transient current technique; transient current technique; two photon absorption-transient current technique; silicon detectors; solid state detectors
• ISSN: 1424-8220; 1424-8220
• DOI: 10.3390/s23020962

The two photon absorption-transient current technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and discussed using a passive strip CMOS detector and a standard strip detector as an example. The influence of laser beam clipping and reflection is shown, and a method that allows to compensate these intensity-related effects for investigation of the electric field is introduced and successfully employed. Additionally, the mirror technique is introduced, which exploits reflection at a metallised back side to enable the measurement directly below a top metallisation while illuminating from the top.