Highly responsive MoS2 photodetectors enhanced by graphene quantum dots
Molybdenum disulphide (MoS 2 ), which is a typical semiconductor from the family of layered transition metal dichalcogenides (TMDs), is an attractive material for optoelectronic and photodetection applications because of its tunable bandgap and high quantum luminescence efficiency. Although a high p...
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Published in | Scientific reports Vol. 5; no. 1; p. 11830 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
03.07.2015
Nature Publishing Group |
Subjects | |
Online Access | Get full text |
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Summary: | Molybdenum disulphide (MoS
2
), which is a typical semiconductor from the family of layered transition metal dichalcogenides (TMDs), is an attractive material for optoelectronic and photodetection applications because of its tunable bandgap and high quantum luminescence efficiency. Although a high photoresponsivity of 880–2000 AW
−1
and photogain up to 5000 have been demonstrated in MoS
2
-based photodetectors, the light absorption and gain mechanisms are two fundamental issues preventing these materials from further improvement. In addition, it is still debated whether monolayer or multilayer MoS
2
could deliver better performance. Here, we demonstrate a photoresponsivity of approximately 10
4
AW
−1
and a photogain of approximately 10
7
electrons per photon in an
n-n
heterostructure photodetector that consists of a multilayer MoS
2
thin film covered with a thin layer of graphene quantum dots (GQDs). The enhanced light-matter interaction results from effective charge transfer and the re-absorption of photons, leading to enhanced light absorption and the creation of electron-hole pairs. It is feasible to scale up the device and obtain a fast response, thus making it one step closer to practical applications. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 These authors contributed equally to this work. |
ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/srep11830 |