Modeling of switching mechanism in GeSbTe chalcogenide superlattices

We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 propo...

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Bibliographic Details
Published inScientific reports Vol. 5; no. 1; p. 12612
Main Authors Yu, Xiaoming, Robertson, John
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 29.07.2015
Nature Publishing Group
Subjects
119/118
639/166/987
639/301/119/544
Energy
Humanities and Social Sciences
multidisciplinary
Phase transitions
Science
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Summary:We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 proposes a transition from Ferro to Inverted Petrov state. Model 2 proposes a switch between Petrov and Inverted Petrov states. For each case, we note that the main transition is actually a vertical displacement of a Ge layer through a Te layer, followed by a lateral motion of GeTe sublayer to the final, low energy structure. Through calculating energy barriers, the rate-determining step is the displacive transition.
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ISSN:2045-2322
2045-2322
DOI:10.1038/srep12612