Neutron Radiation Tolerance of Two Benchmark Thiophene-Based Conjugated Polymers: the Importance of Crystallinity for Organic Avionics

Aviation and space applications can benefit significantly from lightweight organic electronics, now spanning from displays to logics, because of the vital importance of minimising payload (size and mass). It is thus crucial to assess the damage caused to such materials by cosmic rays and neutrons, w...

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Bibliographic Details
Published inScientific reports Vol. 7; no. 1; p. 41013
Main Authors Paternò, G. M., Robbiano, V., Fraser, K. J., Frost, C., García Sakai, V., Cacialli, F.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 23.01.2017
Nature Publishing Group
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Summary:Aviation and space applications can benefit significantly from lightweight organic electronics, now spanning from displays to logics, because of the vital importance of minimising payload (size and mass). It is thus crucial to assess the damage caused to such materials by cosmic rays and neutrons, which pose a variety of hazards through atomic displacements following neutron-nucleus collisions. Here we report the first study of the neutron radiation tolerance of two poly(thiophene)s-based organic semiconductors: poly(3-hexylthiophene-2,5-diyl), P3HT, and the liquid-crystalline poly(2,5-bis (3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT. We combine spectroscopic investigations with characterisation of intrinsic charge mobility to show that PBTTT exhibits significantly higher tolerance than P3HT. We explain this in terms of a superior chemical, structural and conformational stability of PBTTT, which can be ascribed to its higher crystallinity, in turn induced by a combination of molecular design features. Our approach can be used to develop design strategies for better neutron radiation-tolerant materials, thus paving the way for organic semiconductors to enter avionics and space applications.
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Present address: Istituto Italiano di Tecnologia, Center for Nano Science and Technology @ Polimi, via Pascoli 70/3, 20133 Milano, Italy.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep41013