Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires

Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires m...

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Published inScientific reports Vol. 4; no. 1; p. 3603
Main Authors Fabbri, Filippo, Rotunno, Enzo, Lazzarini, Laura, Fukata, Naoki, Salviati, Giancarlo
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 08.01.2014
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Abstract Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.
AbstractList Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.
ArticleNumber 3603
Author Salviati, Giancarlo
Rotunno, Enzo
Lazzarini, Laura
Fukata, Naoki
Fabbri, Filippo
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  givenname: Enzo
  surname: Rotunno
  fullname: Rotunno, Enzo
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  givenname: Laura
  surname: Lazzarini
  fullname: Lazzarini, Laura
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  givenname: Naoki
  surname: Fukata
  fullname: Fukata, Naoki
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  givenname: Giancarlo
  surname: Salviati
  fullname: Salviati, Giancarlo
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BackLink https://www.ncbi.nlm.nih.gov/pubmed/24398782$$D View this record in MEDLINE/PubMed
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SSID ssj0000529419
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Snippet Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic...
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SubjectTerms 639/301/1019/1021
639/301/357/1016
639/301/357/537
639/624/1107/527/1819
Boron
Electronics
Emission measurements
Humanities and Social Sciences
multidisciplinary
Nanotechnology
Nanowires
Science
Silicon
Spectroscopy
Temperature effects
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Title Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires
URI https://link.springer.com/article/10.1038/srep03603
https://www.ncbi.nlm.nih.gov/pubmed/24398782
https://www.proquest.com/docview/1897793591
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https://pubmed.ncbi.nlm.nih.gov/PMC3884225
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