Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires m...
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Published in | Scientific reports Vol. 4; no. 1; p. 3603 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
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Nature Publishing Group UK
08.01.2014
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Abstract | Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature. |
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AbstractList | Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature. |
ArticleNumber | 3603 |
Author | Salviati, Giancarlo Rotunno, Enzo Lazzarini, Laura Fukata, Naoki Fabbri, Filippo |
Author_xml | – sequence: 1 givenname: Filippo surname: Fabbri fullname: Fabbri, Filippo organization: IMEM-CNR Institute, Department of Materials Science and Engineering, Massachusetts Institute of Technology – sequence: 2 givenname: Enzo surname: Rotunno fullname: Rotunno, Enzo organization: IMEM-CNR Institute – sequence: 3 givenname: Laura surname: Lazzarini fullname: Lazzarini, Laura organization: IMEM-CNR Institute – sequence: 4 givenname: Naoki surname: Fukata fullname: Fukata, Naoki organization: International Center for Materials Nanoarchitectonics, National Institute for Materials Science – sequence: 5 givenname: Giancarlo surname: Salviati fullname: Salviati, Giancarlo organization: IMEM-CNR Institute |
BackLink | https://www.ncbi.nlm.nih.gov/pubmed/24398782$$D View this record in MEDLINE/PubMed |
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SubjectTerms | 639/301/1019/1021 639/301/357/1016 639/301/357/537 639/624/1107/527/1819 Boron Electronics Emission measurements Humanities and Social Sciences multidisciplinary Nanotechnology Nanowires Science Silicon Spectroscopy Temperature effects |
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Title | Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires |
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