Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires

Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires m...

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Bibliographic Details
Published inScientific reports Vol. 4; no. 1; p. 3603
Main Authors Fabbri, Filippo, Rotunno, Enzo, Lazzarini, Laura, Fukata, Naoki, Salviati, Giancarlo
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 08.01.2014
Nature Publishing Group
Subjects
639/301/1019/1021
639/301/357/1016
639/301/357/537
639/624/1107/527/1819
Boron
Electronics
Emission measurements
Humanities and Social Sciences
multidisciplinary
Nanotechnology
Nanowires
Science
Silicon
Spectroscopy
Temperature effects
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Summary:Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.
Bibliography:ObjectType-Article-1
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ISSN:2045-2322
2045-2322
DOI:10.1038/srep03603