Macro- and micro-strain in GaN nanowires on Si(111)

We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micr...

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Published inNanotechnology Vol. 22; no. 29; p. 295714
Main Authors Jenichen, B, Brandt, O, Pfüller, C, Dogan, P, Knelangen, M, Trampert, A
Format Journal Article
LanguageEnglish
Published England IOP Publishing 22.07.2011
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Summary:We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from ± (0.015)% to ± (0.03)%. This micro-strain contributes to the linewidth observed in low-temperature photoluminescence spectra.
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/29/295714