P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

• Published in: Scientific reports Vol. 6; no. 1; p. 23683
• Main Authors: Zhang, Kexiong, Sumiya, Masatomo, Liao, Meiyong, Koide, Yasuo, Sang, Liwen
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 29.03.2016; Nature Publishing Group
• Subjects: 639/301/1005/1007; 639/624/1111; Capacitance; Humanities and Social Sciences; multidisciplinary; Polarization; Science; Temperature effects; Transistors; Voltage
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/srep23683

The concept of p -channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al 2 O 3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of −2 V and drain bias of −15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm 2 /Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p -channel behavior is originated from the polarization-induced 2DHG.