In-Plane MEMS Shallow Arch Beam for Mechanical Memory

We demonstrate a memory device based on the nonlinear dynamics of an in-plane microelectromechanical systems (MEMS) clamped⁻clamped beam resonator, which is deliberately fabricated as a shallow arch. The arch beam is made of silicon, and is electrostatically actuated. The concept relies on the inher...

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Published inMicromachines (Basel) Vol. 7; no. 10; p. 191
Main Authors Hafiz, Md Abdullah Al, Kosuru, Lakshmoji, Ramini, Abdallah, Chappanda, Karumbaiah N, Younis, Mohammad I
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 18.10.2016
MDPI
Subjects
Arches
bistability
Data storage
Direct current
Dynamical systems
Electric potential
in-plane MEMS
mechanical memory
Nonlinearity
shallow arch
Softening
Voltage
bistability
mechanical memory
in-plane MEMS
shallow arch
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Summary:We demonstrate a memory device based on the nonlinear dynamics of an in-plane microelectromechanical systems (MEMS) clamped⁻clamped beam resonator, which is deliberately fabricated as a shallow arch. The arch beam is made of silicon, and is electrostatically actuated. The concept relies on the inherent quadratic nonlinearity originating from the arch curvature, which results in a softening behavior that creates hysteresis and co-existing states of motion. Since it is independent of the electrostatic force, this nonlinearity gives more flexibility in the operating conditions and allows for lower actuation voltages. Experimental results are generated through electrical characterization setup. Results are shown demonstrating the switching between the two vibrational states with the change of the direct current (DC) bias voltage, thereby proving the memory concept.
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ISSN:2072-666X
2072-666X
DOI:10.3390/mi7100191