The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures
We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital...
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Published in | Sensors (Basel, Switzerland) Vol. 16; no. 4; p. 526 |
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Main Authors | , , , , , , |
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Abstract | We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5-3.5 μm. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient (k²) were determined from the measure S11 parameters. The Q-factor and k² were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems. |
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AbstractList | We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5-3.5 μm. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient (k²) were determined from the measure S11 parameters. The Q-factor and k² were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems. We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5–3.5 μm. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient (k2) were determined from the measure S11 parameters. The Q-factor and k2 were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems. We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5–3.5 μm. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient ( k 2 ) were determined from the measure S 11 parameters. The Q-factor and k 2 were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems. We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 mu m were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5-3.5 mu m. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient (k2) were determined from the measure S11 parameters. The Q-factor and k2 were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems. |
Author | Peng, Bin Shu, Lin Gong, Dongdong Li, Chuan Liu, Xingzhao Zhang, Wanli Yang, Zhengbing |
AuthorAffiliation | 2 China Gas Turbine Establishment, Jiangyou 621703, China; zbyang668@163.com 1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; s89s89s@126.com (L.S.); uestc_lich@hotmail.com (C.L.); 15196609270@163.com (D.G.); xzliu@uestc.edu.cn (X.L.); wlzhang@uestc.edu.cn (W.Z.) |
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Cites_doi | 10.1007/s12598-016-0703-x 10.1002/adma.201104842 10.1016/j.ultras.2008.11.004 10.1116/1.1649343 10.1063/1.1574172 10.1016/S0254-0584(02)00252-3 10.1063/1.124055 10.1109/JSEN.2011.2181160 10.1109/JSEN.2013.2285722 10.1109/TUFFC.2006.1588412 10.1016/j.sna.2006.03.001 10.1109/TUFFC.2013.2656 10.1109/TUFFC.2011.1840 10.1109/TUFFC.2012.2285 10.1109/TUFFC.2009.1166 10.1109/TUFFC.2010.1443 10.1116/1.4922341 10.3390/s140100144 10.1049/el.2014.3495 |
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Snippet | We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with... |
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SubjectTerms | Adhesives AlN film Aluminum nitride Design Devices Electrodes Film thickness Geometry layered structure Propagation Sensors Simulation surface acoustic wave Surface acoustic wave devices Surface acoustic waves TC4 Thickness Titanium alloys Velocity Zinc oxides |
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Title | The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures |
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