Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave – Effects of baffle shape

• Published in: International journal of heat and mass transfer Vol. 53; no. 5; pp. 940 - 943
• Main Authors: Masuda, Y., Suzuki, A., Mikawa, Y., Kagamitani, Y., Ishiguro, T., Yokoyama, C., Tsukada, T.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.02.2010; Elsevier
• Subjects: Ammonothermal growth; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Funnel-shaped baffle; GaN; Growth from solutions; Materials science; Methods of crystal growth; physics of crystal growth; Natural convection; Numerical simulation; Physics; Temperature; France, Aquitaine, Gan; Ammonothermal growth; Numerical simulation; Temperature; Natural convection; Funnel-shaped baffle; GaN; Temperature distribution; Monocrystals; Autoclaves; Computational fluid dynamics; Baffles; Computer software; Digital simulation; Crystal growth from solutions; Modelling; Gallium nitride; Heat transfer
• ISSN: 0017-9310; 1879-2189
• DOI: 10.1016/j.ijheatmasstransfer.2009.11.027

The numerical simulation of an ammonothermal process for growing GaN bulk single crystals has been performed by using the SC/Tetra computational fluid dynamics software. The autoclave is assumed to be axisymmetric. Heat transfer by natural convection is discussed in the case of flat and funnel-shaped baffles. Simulation results show that the optimum baffle angle is approximately 20°. This result is identical to that obtained in our previous study on the hydrothermal ZnO crystal growth process.