Topological insulator Bi2Se3 for highly sensitive, selective and anti-humidity gas sensors
Chemiresistive gas sensors generally surfer from low selectivity, inferior anti-humidity, low response signal or signal-to-noise ratio, severely limiting the precise detection of chemical agents. Herein, we exploit high-performance gas sensors based on topological insulator Bi2Se3 that is distinguis...
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Published in | iScience Vol. 26; no. 4; p. 106387 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Inc
21.04.2023
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Chemiresistive gas sensors generally surfer from low selectivity, inferior anti-humidity, low response signal or signal-to-noise ratio, severely limiting the precise detection of chemical agents. Herein, we exploit high-performance gas sensors based on topological insulator Bi2Se3 that is distinguished from conventional materials by robust metallic surface states protected by time-reversal symmetry. In the presence of Se vacancies, Bi2Se3 nanosheets exhibit excellent gas sensing capability toward NO2, with a high response of 93% for 50 ppm and an ultralow theoretical limit of detection concentration about 0.06 ppb at room temperature. Remarkably, Bi2Se3 demonstrates ultrahigh anti-humidity interference characteristics, as the response with standard deviation of only 3.63% can be achieved in relative humidity range of 0–80%. These findings are supported by first-principles calculations, with analyses on adsorption energy and charge transfer directly revealing the anti-humidity and selectivity. This work may pave the way for implementation of exotic quantum states for intelligent applications.
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•Topological insulator Bi2Se3 based high-performance gas sensors are demonstrated•Se vacancies enhance the gas sensing capability of Bi2Se3 toward NO2•The sensing device exhibits ultrahigh anti-humidity interference characteristics•First-principles analyses reveal the mechanism of anti-humidity and selectivity
Sensor; Condensed matter properties; Structural property of matter |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 These authors contributed equally Lead contact |
ISSN: | 2589-0042 2589-0042 |
DOI: | 10.1016/j.isci.2023.106387 |