Hole-transporting layer-free inverted planar mixed lead-tin perovskite-based solar cells

Mixed lead-tin （Pb-Sn） perovskites present a promising strategy to extend the light-harvesting range of perovskite-based solar cells （PSCs）. The use of electron- transporting layer or hole-transporting layer （HTL） is critical to achieve high device efficiency. This strategy, however, requires tediou...

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Published inFrontiers of Optoelectronics (Online) Vol. 10; no. 2; pp. 103 - 110
Main Authors Liao, Yuqin, Jiang, Xianyuan, Zhou, Wenjia, Shi, Zhifang, Li, Binghan, Mi, Qixi, Ning, Zhijun
Format Journal Article
LanguageEnglish
Published Beijing Higher Education Press 01.06.2017
Springer Nature B.V
Subjects
Annealing
Biomedical Engineering and Bioengineering
Current density
Electrical Engineering
Engineering
Lead
Oxides
Perovskites
Photovoltaic cells
Physics
Research Article
Solar cells
Tin
Transporting
perovskite
solar cell
hole-transporting layer (HTL)
interface engineering
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Summary:Mixed lead-tin （Pb-Sn） perovskites present a promising strategy to extend the light-harvesting range of perovskite-based solar cells （PSCs）. The use of electron- transporting layer or hole-transporting layer （HTL） is critical to achieve high device efficiency. This strategy, however, requires tedious layer-by-layer fabrication as well as high-temperature annealing for certain oxides. In this work, we fabricated HTL-free planar FAPb0.5Sn0.5I3 PSCs with the highest efficiency of 7.94%. High short- circuit current density of 23.13 mA/cm2 was attained, indicating effective charge extraction at the ITO/ FAPb0.5Sn0.5I3 interface. This finding provides an alter- native strategy to simplify the manufacture of single- junction or tandem PSCs.
Bibliography:10-1029/TN
Mixed lead-tin （Pb-Sn） perovskites present a promising strategy to extend the light-harvesting range of perovskite-based solar cells （PSCs）. The use of electron- transporting layer or hole-transporting layer （HTL） is critical to achieve high device efficiency. This strategy, however, requires tedious layer-by-layer fabrication as well as high-temperature annealing for certain oxides. In this work, we fabricated HTL-free planar FAPb0.5Sn0.5I3 PSCs with the highest efficiency of 7.94%. High short- circuit current density of 23.13 mA/cm2 was attained, indicating effective charge extraction at the ITO/ FAPb0.5Sn0.5I3 interface. This finding provides an alter- native strategy to simplify the manufacture of single- junction or tandem PSCs.
solar cell, perovskite, hole-transporting layer（HTL）, interface engineering
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:2095-2759
2095-2767
DOI:10.1007/s12200-017-0716-6