Thickness-induced metal to insulator transition in Ru nanosheets probed by photoemission spectroscopy: Effects of disorder and Coulomb interaction

We investigated the electronic structures of mono- and few-layered Ru nanosheets (N layers (L) with N = 1, ~6, and ~9) on Si substrate by ultra-violet and x-ray photoemission spectroscopies. The spectral density of states (DOS) near E of ~6 L and 1 L is suppressed as it approaches E in contrast to t...

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Published inScientific reports Vol. 10; no. 1; p. 1541
Main Authors Ootsuki, Daiki, Kodera, Kenjiro, Shimonaka, Daiya, Arita, Masashi, Namatame, Hirofumi, Taniguchi, Masaki, Minohara, Makoto, Horiba, Koji, Kumigashira, Hiroshi, Ikenaga, Eiji, Yasui, Akira, Uchimoto, Yoshiharu, Toyoda, Satoshi, Morita, Masahito, Fukuda, Katsutoshi, Yoshida, Teppei
Format Journal Article
LanguageEnglish
Published England Nature Publishing Group 30.01.2020
Nature Publishing Group UK
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Summary:We investigated the electronic structures of mono- and few-layered Ru nanosheets (N layers (L) with N = 1, ~6, and ~9) on Si substrate by ultra-violet and x-ray photoemission spectroscopies. The spectral density of states (DOS) near E of ~6 L and 1 L is suppressed as it approaches E in contrast to that of ~9 L, which is consistent with the Ru 3 d core-level shift indicating the reduction of the metallic conductivity. A power law g(ε) ∝ |ε - ε | well reproduces the observed spectral DOS of ~6 L and 1 L. The evolution of the power factor α suggests that the transition from the metallic state of ~9 L to the 2-dimensional insulating state with the soft Coulomb gap of 1 L through the disordered 3-dimensional metallic state of ~6 L.
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-020-58057-9