Temperature- and diameter-dependent electrical conductivity of nitrogen doped ZnO nanowires

• Published in: The European physical journal. B, Condensed matter physics Vol. 92; no. 7; pp. 1 - 7
• Main Authors: Li, Shu-Long, Yu, Xiao-Xia, Li, Ya-Lin, Gong, Pei, Jia, Ya-Hui, Fang, Xiao-Yong, Cao, Mao-Sheng
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.07.2019; Springer; Springer Nature B.V
• Subjects: Atoms; Carrier density; Complex Systems; Computer simulation; Condensed Matter Physics; Conductivity; Density distribution; Electric properties; Electrical conductivity; Electrical resistivity; First principles; Fluid- and Aerodynamics; Force and energy; Magnetic properties; Mathematical analysis; Nanowires; Nitrogen; Physics; Physics and Astronomy; Regular Article; Solid State Physics; Temperature dependence; Transport theory; Zinc oxide; Mesoscopic and Nanoscale Systems
• ISSN: 1434-6028; 1434-6036
• DOI: 10.1140/epjb/e2019-100208-3

A modified formula to calculate the axial conductivity of nanowires was proposed based on the one-dimensional quantum state density distribution and Boltzmann transport theory. Numerical simulations of the ZnO nanowires (ZnONWs) and Nitrogen-doped ZnO nanowires (N-ZnONWs) were implemented using data from the first principles calculation. The results indicate that ZnONWs are low-conductivity wide band-gap semiconductors owing to their low carrier concentrations at room temperature, with N-doping increasing the conductivity. The N-ZnONWs carrier concentrations increased with increasing temperature, and possessed significantly higher carrier concentrations than ZnONWs. With an increase in diameter, the ZnONWs conductivities increased, whereas the N-ZnONWs conductivities decreased. Graphical abstract