Improved device efficiency and lifetime of perovskite light-emitting diodes by size-controlled polyvinylpyrrolidone-capped gold nanoparticles with dipole formation

• Published in: Scientific reports Vol. 12; no. 1; pp. 2300 - 14
• Main Authors: Lee, Chang Min, Choi, Dong Hyun, Islam, Amjad, Kim, Dong Hyun, Kim, Tae Wook, Jeong, Geon-Woo, Cho, Hyun Woo, Park, Min Jae, Shah, Syed Hamad Ullah, Chae, Hyung Ju, Kim, Kyoung-Ho, Sujak, Muhammad, Lee, Jae Woo, Kim, Donghyun, Kim, Chul Hoon, Lee, Hyun Jae, Bae, Tae-Sung, Yu, Seung Min, Jin, Jong Sung, Kang, Yong-Cheol, Park, Juyun, Song, Myungkwan, Kim, Chang-Su, Shin, Sung Tae, Ryu, Seung Yoon
• Format: Journal Article
• Language: English
• Published: England Nature Publishing Group 10.02.2022; Nature Publishing Group UK; Nature Portfolio
• Subjects: Light emitting diodes; Nanoparticles; Polyvinylpyrrolidone; Recombination; Trapping
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-022-05935-z

Herein, an unprecedented report is presented on the incorporation of size-dependent gold nanoparticles (AuNPs) with polyvinylpyrrolidone (PVP) capping into a conventional hole transport layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The hole transport layer blocks ion-diffusion/migration in methylammonium-lead-bromide (MAPbBr )-based perovskite light-emitting diodes (PeLEDs) as a modified interlayer. The PVP-capped 90 nm AuNP device exhibited a seven-fold increase in efficiency (1.5%) as compared to the device without AuNPs (0.22%), where the device lifetime was also improved by 17-fold. This advancement is ascribed to the far-field scattering of AuNPs, modified work function and carrier trapping/detrapping. The improvement in device lifetime is attributed to PVP-capping of AuNPs which prevents indium diffusion into the perovskite layer and surface ion migration into PEDOT:PSS through the formation of induced electric dipole. The results also indicate that using large AuNPs (> 90 nm) reduces exciton recombination because of the trapping of excess charge carriers due to the large surface area.