Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

• Published in: Scientific reports Vol. 9; no. 1; pp. 20242 - 5
• Main Authors: Ueno, Kohei, Taiga, Fudetani, Kobayashi, Atsushi, Fujioka, Hiroshi
• Format: Journal Article
• Language: English
• Published: England Nature Publishing Group 27.12.2019; Nature Publishing Group UK
• Subjects: Compensation; Energy; Investigations; Light emitting diodes; Low temperature; Mobility; Optical properties; Photons; Point defects; Semiconductors; Ultraviolet radiation
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-019-56306-0

We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm V s at an electron concentration of 2.9 × 10  cm , prepared using pulsed sputtering deposition (PSD). With an increase in the doping concentration, the absorption edge was found to shift toward a higher energy level, owing to the Burstein-Moss effect, thus making this material suitable for the transparent conductive tunneling electrodes of visible and ultraviolet-A light-emitting diodes. The full width at half maximum value of the near-band-edge (NBE) emissions in a photoluminescence spectrum measured at 77 K was as small as 185 meV, even for the sample with the highest electron concentration of 2.9 × 10  cm . Such sharp NBE emissions from PSD-grown heavily Si-doped GaN films can be explained by an analytical model with a low compensation ratio θ of around 0.1, which is consistent with the exceptionally high observed electron mobility. These results indicate the strong potential of the low-temperature PSD growth technique for the formation of high-quality, heavily Si-doped GaN.