Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

• Published in: AIP advances Vol. 5; no. 11; pp. 117144 - 117144-9
• Main Authors: Uchida, Takafumi, Jo, Mingyu, Tsurumaki-Fukuchi, Atsushi, Arita, Masashi, Fujiwara, Akira, Takahashi, Yasuo
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.11.2015; AIP Publishing LLC
• Subjects: CAPACITANCE; ELECTRODES; ELECTRONS; EVALUATION; FABRICATION; Gates; NANOSCIENCE AND NANOTECHNOLOGY; NANOWIRES; OXIDATION; QUANTUM DOTS; SILICON

Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-el...