Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-el...

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Bibliographic Details
Published inAIP advances Vol. 5; no. 11; pp. 117144 - 117144-9
Main Authors Uchida, Takafumi, Jo, Mingyu, Tsurumaki-Fukuchi, Atsushi, Arita, Masashi, Fujiwara, Akira, Takahashi, Yasuo
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.11.2015
AIP Publishing LLC
Subjects
CAPACITANCE
ELECTRODES
ELECTRONS
EVALUATION
FABRICATION
Gates
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
OXIDATION
QUANTUM DOTS
SILICON
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Summary:Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4936563