Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-el...

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Published inAIP advances Vol. 5; no. 11; pp. 117144 - 117144-9
Main Authors Uchida, Takafumi, Jo, Mingyu, Tsurumaki-Fukuchi, Atsushi, Arita, Masashi, Fujiwara, Akira, Takahashi, Yasuo
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.11.2015
AIP Publishing LLC
Subjects
CAPACITANCE
ELECTRODES
ELECTRONS
EVALUATION
FABRICATION
Gates
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
OXIDATION
QUANTUM DOTS
SILICON
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Abstract Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates.
AbstractList Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates.
Author Uchida, Takafumi
Jo, Mingyu
Fujiwara, Akira
Arita, Masashi
Takahashi, Yasuo
Tsurumaki-Fukuchi, Atsushi
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  surname: Takahashi
  fullname: Takahashi, Yasuo
BackLink https://www.osti.gov/biblio/22492189$$D View this record in Osti.gov
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Cites_doi 10.1063/1.4913393
10.1038/srep00110
10.1063/1.114824
10.1109/16.760403
10.1143/JJAP.40.L29
10.1088/0953-8984/14/39/201
10.1016/j.tsf.2009.10.085
10.1143/JJAP.37.3257
10.1063/1.2891063
10.1063/1.2168496
10.1143/JJAP.40.2100
10.1063/1.3518919
10.1038/nphys988
10.1063/1.3258663
10.1103/PhysRevB.66.035314
10.1103/PhysRevB.82.075304
10.1016/S0167-9317(01)00638-4
10.1049/el:19950082
10.1088/1367-2630/11/11/113037
10.1103/PhysRevLett.64.2691
10.1016/0921-4526(91)90332-9
10.1088/0268-1242/11/3/003
10.1063/1.4875909
10.1063/1.4869108
10.1038/nmat3182
10.1109/5.752518
10.1103/PhysRevB.67.161308
10.1103/RevModPhys.64.849
10.1103/RevModPhys.79.1217
10.1038/nature10707
10.1063/1.3483618
10.1007/s11128-004-2224-z
10.1007/978-94-015-8839-3_4
10.1103/PhysRevB.76.075306
10.1063/1.2431778
10.1103/PhysRevB.77.073310
10.1103/RevModPhys.75.1
10.1016/j.sse.2003.12.019
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References (2023071907025251900_c32) 2004; 48
(2023071907025251900_c35) 1999; 46
(2023071907025251900_c7) 1991; 169
(2023071907025251900_c25) 2009; 11
(2023071907025251900_c13) 2002; 75
Sohn (2023071907025251900_c4) 1997
(2023071907025251900_c31) 2001; 40
(2023071907025251900_c6) 1999; 87
(2023071907025251900_c36) 2010; 518
(2023071907025251900_c2) 2004; 3
(2023071907025251900_c15) 2007; 79
(2023071907025251900_c22) 2012; 481
(2023071907025251900_c33) 2010; 97
(2023071907025251900_c38) 1998; 37
(2023071907025251900_c37) 2015; 117
(2023071907025251900_c5) 1992; 64
(2023071907025251900_c24) 2008; 77
(2023071907025251900_c26) 2010; 82
(2023071907025251900_c1) 2001; 40
(2023071907025251900_c17) 2007; 90
(2023071907025251900_c12) 2014; 104
(2023071907025251900_c27) 2010; 97
(2023071907025251900_c8) 1990; 64
(2023071907025251900_c18) 2002; 66
(2023071907025251900_c3) 1996; 11
(2023071907025251900_c19) 2008; 4
(2023071907025251900_c28) 2008; 92
(2023071907025251900_c9) 2003; 67
(2023071907025251900_c16) 2002; 14
(2023071907025251900_c23) 2006; 88
(2023071907025251900_c30) 2001; 59
(2023071907025251900_c34) 1995; 67
(2023071907025251900_c11) 2014; 104
(2023071907025251900_c10) 2009; 95
(2023071907025251900_c20) 2012; 11
(2023071907025251900_c14) 2007; 76
(2023071907025251900_c21) 2011; 1
(2023071907025251900_c29) 1995; 31
References_xml – volume: 117
  start-page: 084316
  year: 2015
  ident: 2023071907025251900_c37
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4913393
– volume: 1
  start-page: 110
  year: 2011
  ident: 2023071907025251900_c21
  publication-title: Sci. Rept
  doi: 10.1038/srep00110
– volume: 67
  start-page: 2957
  year: 1995
  ident: 2023071907025251900_c34
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.114824
– volume: 46
  start-page: 954
  year: 1999
  ident: 2023071907025251900_c35
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/16.760403
– volume: 40
  start-page: L29
  year: 2001
  ident: 2023071907025251900_c31
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.40.L29
– volume: 14
  start-page: R995
  year: 2002
  ident: 2023071907025251900_c16
  publication-title: J. Phys.: Condens Matter
  doi: 10.1088/0953-8984/14/39/201
– volume: 518
  start-page: S186
  year: 2010
  ident: 2023071907025251900_c36
  publication-title: Thin Solid Films
  doi: 10.1016/j.tsf.2009.10.085
– volume: 37
  start-page: 3257
  year: 1998
  ident: 2023071907025251900_c38
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.37.3257
– volume: 92
  start-page: 092110
  year: 2008
  ident: 2023071907025251900_c28
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2891063
– volume: 88
  start-page: 053121
  year: 2006
  ident: 2023071907025251900_c23
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2168496
– volume: 40
  start-page: 2100
  year: 2001
  ident: 2023071907025251900_c1
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.40.2100
– volume: 97
  start-page: 212104
  year: 2010
  ident: 2023071907025251900_c27
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3518919
– volume: 4
  start-page: 540
  year: 2008
  ident: 2023071907025251900_c19
  publication-title: Nat. Phys.
  doi: 10.1038/nphys988
– volume: 95
  start-page: 193101
  year: 2009
  ident: 2023071907025251900_c10
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3258663
– volume: 66
  start-page: 035314
  year: 2002
  ident: 2023071907025251900_c18
  publication-title: Phys. Rev. B.
  doi: 10.1103/PhysRevB.66.035314
– volume: 82
  start-page: 075304
  year: 2010
  ident: 2023071907025251900_c26
  publication-title: Phys. Rev. B.
  doi: 10.1103/PhysRevB.82.075304
– volume: 59
  start-page: 435
  year: 2001
  ident: 2023071907025251900_c30
  publication-title: Microelectron. Eng.
  doi: 10.1016/S0167-9317(01)00638-4
– volume: 31
  start-page: 136
  year: 1995
  ident: 2023071907025251900_c29
  publication-title: Electron. Lett.
  doi: 10.1049/el:19950082
– volume: 11
  start-page: 113037
  year: 2009
  ident: 2023071907025251900_c25
  publication-title: New. J. Phys.
  doi: 10.1088/1367-2630/11/11/113037
– volume: 64
  start-page: 2691
  year: 1990
  ident: 2023071907025251900_c8
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.64.2691
– volume: 169
  start-page: 573
  year: 1991
  ident: 2023071907025251900_c7
  publication-title: Physica B
  doi: 10.1016/0921-4526(91)90332-9
– volume: 11
  start-page: 255
  year: 1996
  ident: 2023071907025251900_c3
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/11/3/003
– volume: 104
  start-page: 183111
  year: 2014
  ident: 2023071907025251900_c11
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4875909
– volume: 104
  start-page: 113109
  year: 2014
  ident: 2023071907025251900_c12
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4869108
– volume: 11
  start-page: 143
  year: 2012
  ident: 2023071907025251900_c20
  publication-title: Nat. Mater.
  doi: 10.1038/nmat3182
– volume: 87
  start-page: 606
  year: 1999
  ident: 2023071907025251900_c6
  publication-title: Proc. IEEE
  doi: 10.1109/5.752518
– volume: 67
  start-page: 161308(R)
  year: 2003
  ident: 2023071907025251900_c9
  publication-title: Phys. Rev. B.
  doi: 10.1103/PhysRevB.67.161308
– volume: 64
  start-page: 849
  year: 1992
  ident: 2023071907025251900_c5
  publication-title: Rev. Mod. Phys.
  doi: 10.1103/RevModPhys.64.849
– volume: 79
  start-page: 1217
  year: 2007
  ident: 2023071907025251900_c15
  publication-title: Rev. Mod. Phys.
  doi: 10.1103/RevModPhys.79.1217
– volume: 481
  start-page: 344
  year: 2012
  ident: 2023071907025251900_c22
  publication-title: Nature
  doi: 10.1038/nature10707
– volume: 97
  start-page: 103101
  year: 2010
  ident: 2023071907025251900_c33
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3483618
– volume: 3
  start-page: 133
  year: 2004
  ident: 2023071907025251900_c2
  publication-title: Quantum Information Processing.
  doi: 10.1007/s11128-004-2224-z
– start-page: 105
  year: 1997
  ident: 2023071907025251900_c4
  doi: 10.1007/978-94-015-8839-3_4
  contributor:
    fullname: Sohn
– volume: 76
  start-page: 075306
  year: 2007
  ident: 2023071907025251900_c14
  publication-title: Phys. Rev. B.
  doi: 10.1103/PhysRevB.76.075306
– volume: 90
  start-page: 033507
  year: 2007
  ident: 2023071907025251900_c17
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2431778
– volume: 77
  start-page: 073310
  year: 2008
  ident: 2023071907025251900_c24
  publication-title: Phys. Rev. B.
  doi: 10.1103/PhysRevB.77.073310
– volume: 75
  start-page: 1
  year: 2002
  ident: 2023071907025251900_c13
  publication-title: Rev. Mod. Phys.
  doi: 10.1103/RevModPhys.75.1
– volume: 48
  start-page: 1073
  year: 2004
  ident: 2023071907025251900_c32
  publication-title: Solid. State. Electron.
  doi: 10.1016/j.sse.2003.12.019
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Snippet Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and...
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SubjectTerms CAPACITANCE
ELECTRODES
ELECTRONS
EVALUATION
FABRICATION
Gates
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
OXIDATION
QUANTUM DOTS
SILICON
Title Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire
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