Fluorescent SiC and its application to white light-emitting diodes

• Published in: Journal of semiconductors Vol. 32; no. 1; pp. 24 - 26
• Main Authors: Kamiyama, Satoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Akasaki, Isamu, Syväjärvi, Mikael, Yakimova, Rositza
• Format: Journal Article
• Language: Chinese; English
• Published: IOP Publishing 2011
• Subjects: Conversion; Epitaxial growth; LED器件; Light-emitting diodes; Optical properties; Semiconductors; Silicon carbide; Spectra; Stacks; 应用; 最佳浓度; 白光LED; 白光发光二极管; 碳化硅; 荧光; 转换效率; general lighting; donor-acceptor-pair; phosphor; SiC; GaN; white LED
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/32/1/013004

Fluorescent-SiC （f-SiC）, which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair （DAP） recombination. This material can be used as a substrate for a near UVlight-emitting diode （LED） stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.