Fluorescent SiC and its application to white light-emitting diodes

Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination. This material can be used as a substrate for a near UVlight-emitting diode (LED) stack, and l...

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Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 1; pp. 24 - 26
Main Authors Kamiyama, Satoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Akasaki, Isamu, Syväjärvi, Mikael, Yakimova, Rositza
Format Journal Article
LanguageChinese
English
Published IOP Publishing 2011
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Summary:Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination. This material can be used as a substrate for a near UVlight-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.
Bibliography:donor-acceptor-pair
GaN
general lighting
white LED; phosphor; SiC; donor-acceptor-pair; GaN; general lighting
phosphor
SiC
11-5781/TN
white LED
TN312.8
TQ174.758
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/1/013004