Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications

• Published in: Journal of lightwave technology Vol. 19; no. 4; pp. 546 - 552
• Main Authors: Qasaimeh, O., Zhou, W., Bhattacharya, P., Huffaker, D., Deppe, D.G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2001; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Gain; Heterojunctions; Light emitting diodes; Microcavities; Modulation; Molecular beam epitaxy; Noise levels; Optical modulation; Optical surface waves; Optoelectronic devices; Phototransistors; Power dissipation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface emitting lasers; Vertical cavity surface emission lasers; Vertical cavity surface emitting lasers; Vertical cavity laser; Integrated optoelectronics; Performance characteristic; Surface emitting laser; Heterojunction transistor; Parallel processing; Phototransistor; Monolithic integrated circuit; Image sensor; Light emitting diode; Transceiver
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/50.920853

A low-power GaAs-based monolithically integrated phototransceiver, consisting of a high-gain heterojunction phototransistor (WPT) and a microcavity light-emitting diode (MCLED) or a low-threshold vertical-cavity surface-emitting laser (VCSEL), is demonstrated. The HPT and MCLED/VCSEL are grown by molecular-beam epitaxy in a single step. The phototransistor exhibits a responsivity of 60 A/W at an input power of 1 /spl mu/W. The input and output wavelengths are 850 and 980 nm, respectively. The MCLED-based phototransceiver exhibits an optical gain of 7 dB and power dissipation of 400 /spl mu/W for an input power of 1.5 /spl mu/W. The small signal modulation bandwidth is 80 MHz. On the other hand, the VCSEL-based phototransceiver exhibits an optical gain of 10 dB and power dissipation of 760 /spl mu/W for an input power of 2.5 /spl mu/W.