Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100) and (110) orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different...

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Bibliographic Details
Published inAIP advances Vol. 6; no. 9; pp. 095114 - 095114-10
Main Authors Koo, Sangmo, Jang, Hyunchul, Kim, Sun-Wook, Ko, Dae-Hong
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.09.2016
AIP Publishing LLC
Subjects
Chemical vapor deposition
Dependence
Epitaxial growth
Germanium
Organic chemistry
Silicon germanides
Strain distribution
Ultrahigh vacuum
Wafers
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Summary:The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100) and (110) orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si1-xGex growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si1-xGex source/drain (S/D) structure.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4963296