A two-step process for growth of highly oriented Sb2Te3 using sputtering

A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and sub...

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Bibliographic Details
Published inAIP advances Vol. 6; no. 4; pp. 045220 - 045220-5
Main Authors Saito, Yuta, Fons, Paul, Bolotov, Leonid, Miyata, Noriyuki, Kolobov, Alexander V., Tominaga, Junji
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.04.2016
AIP Publishing LLC
Subjects
Electronic devices
Sputtering
Superlattices
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Summary:A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4948536