Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

• Published in: IEEE journal of quantum electronics Vol. 38; no. 5; pp. 446 - 450
• Main Authors: Wu, L.W., Chang, S.J., Wen, T.C., Su, Y.K., Chen, J.F., Lai, W.C., Kuo, C.H., Chen, C.H., Sheu, J.K.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2002; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Barrier layers; Barriers; Diffraction; Doping; Electric potential; Electronics; Exact sciences and technology; Gallium nitride; Gallium nitrides; Indium; Light emitting diodes; Microelectronics; Optoelectronic devices; Quantum well devices; Quantum wells; Radiative recombination; Semiconductor diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature; Voltage; X-ray diffraction; Ternary compound; Performance evaluation; Binary compound; Barrier layer; Doping; Multiple quantum well; Silicon addition; Indium nitride; Blue light; Gallium nitride; Light emitting diode
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.998615

A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed. Compared with unintentionally doped samples, X-ray diffraction results indicate that Si-doping in barrier layers can improve the crystal and interfacial qualities of the InGaN-GaN MQW LEDs. It was also found that the forward voltage is 3.5 and 4.52 V, the 20-mA luminous intensity is 36.1 and 25.1 mcd for LEDs with a Si-doped barrier and an unintentionally doped barrier, respectively. These results suggests that one can significantly improve the performance of InGaN-GaN MQW LEDs by introducing Si doping in the GaN barrier layers.