Enhancing Efficiency in Inverted Quantum Dot Light-Emitting Diodes through Arginine-Modified ZnO Nanoparticle Electron Injection Layer

Many quantum dot light-emitting diodes (QLEDs) utilize ZnO nanoparticles (NPs) as an electron injection layer (EIL). However, the use of the ZnO NP EIL material often results in a charge imbalance within the quantum dot (QD) emitting layer (EML) and exciton quenching at the interface of the QD EML a...

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Published inNanomaterials (Basel, Switzerland) Vol. 14; no. 3; p. 266
Main Authors Chae, Young-Bin, Kim, Su-Young, Choi, Hyuk-Doo, Moon, Dae-Gyu, Lee, Kyoung-Ho, Kim, Chang-Kyo
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 01.01.2024
Subjects
Amino acids
Arginine
Current efficiency
Efficiency
Electrons
Excitons
Injection
interlayer
Interlayers
Light emitting diodes
Mechanical properties
Metal oxides
Nanoparticles
PEI
Polyethyleneimine
Quantum dots
Quantum efficiency
Quenching
Spectrum analysis
work function inverted quantum dot light-emitting diode
Work functions
Zinc oxide
ZnO nanoparticles
South Korea
interlayer
arginine
ZnO nanoparticles
work function inverted quantum dot light-emitting diode
PEI
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Summary:Many quantum dot light-emitting diodes (QLEDs) utilize ZnO nanoparticles (NPs) as an electron injection layer (EIL). However, the use of the ZnO NP EIL material often results in a charge imbalance within the quantum dot (QD) emitting layer (EML) and exciton quenching at the interface of the QD EML and ZnO NP EIL. To overcome these challenges, we introduced an arginine (Arg) interlayer (IL) onto the ZnO NP EIL. The Arg IL elevated the work function of ZnO NPs, thereby suppressing electron injection into the QD, leading to an improved charge balance within the QDs. Additionally, the inherent insulating nature of the Arg IL prevented direct contact between QDs and ZnO NPs, reducing exciton quenching and consequently improving device efficiency. An inverted QLED (IQLED) utilizing a 20 nm-thick Arg IL on the ZnO NP EIL exhibited a 2.22-fold increase in current efficiency and a 2.28-fold increase in external quantum efficiency (EQE) compared to an IQLED without an IL. Likewise, the IQLED with a 20 nm-thick Arg IL on the ZnO NP EIL demonstrated a 1.34-fold improvement in current efficiency and a 1.36-fold increase in EQE compared to the IQLED with a 5 nm-thick polyethylenimine IL on ZnO NPs.
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ISSN:2079-4991
2079-4991
DOI:10.3390/nano14030266