Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs

Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (I/sub SUB/) versus gate voltage (VG) characteristics. It is shown that the anomalous peak can not be directly relate...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 49; no. 7; pp. 1283 - 1288
Main Authors Anil, K.G., Mahapatra, S., Eisele, I.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Devices
Drains
Electric potential
Electrons
Gates
Hot carriers
Impact ionization
Monte Carlo methods
MOSFETs
Phonons
Semiconductor device modeling
Silicon
Silicon substrates
Simulation
Voltage
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Summary:Impact ionization at low drain voltages in n-MOSFETs was investigated employing devices with three different channel-doping profiles. We report an anomalous peak in substrate current (I/sub SUB/) versus gate voltage (VG) characteristics. It is shown that the anomalous peak can not be directly related to any high field region in the device. The measured data is interpreted based on the general nature of electron energy distribution published by Monte-Carlo simulation groups. Strong evidence is provided which suggest that the anomalous peak in ISUB versus VC, is due to electron-electron interactions.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2002.1013287