Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/CdxZn1−xO thin films and Ga2O3 powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of anneal...

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Published inPhysica Status Solidi. B: Basic Solid State Physics Vol. 250; no. 4; pp. 801 - 808
Main Authors Barbosa, M. B., Gonçalves, J. N., Redondo-Cubero, A., Miranda, S. M. C., Simon, R., Kessler, P., Brandt, M., Henneberger, F., Nogales, E., Méndez, B., Johnston, K., Alves, E., Vianden, R., Araújo, J. P., Lorenz, K., Correia, J. G.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.04.2013
WILEY‐VCH Verlag
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Summary:The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/CdxZn1−xO thin films and Ga2O3 powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of 111mCd/111Cd (T1/2 = 48 min) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe‐defect complex. The ternary CdxZn1−xO (x = 0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga2O3 samples, the substitution of the Cd probes in the octahedral Ga‐site was observed, demonstrating the potential of ion‐implantation for the doping of nanowires.
Bibliography:ark:/67375/WNG-X0SWTBM4-N
ISOLDE proposal IS481 and supported by FCT-Portugal, project CERN-FP-123585-2011 and by the European Union FP7-through ENSAR, contract 262010
ArticleID:PSSB201200923
istex:D46CB1C7587DC9B007081797A7388034048E6DB4
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201200923