A Ku-Band Miniaturized System-in-Package Using HTCC for Radar Transceiver Module Application

• Published in: Micromachines (Basel) Vol. 13; no. 11; p. 1817
• Main Authors: Yang, Fan, Zhang, Bowen, Song, Leijun
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 24.10.2022; MDPI
• Subjects: Airtightness; Aluminum; Ceramic materials; Ceramics; CMOS; Dielectric properties; Dissipation; four channels; Gold; Heat conductivity; Heat sinks; High temperature; high temperature co-fired ceramics (HTCC); Integrated circuits; Ku-band; Molybdenum; Multilayers; Packaging; Phase control; Radar systems; Receivers & amplifiers; Receiving; Semiconductors; Silicon wafers; Substrates; Superhigh frequencies; system in package (SIP); Transceivers; Transmission
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi13111817

This paper introduces a miniaturized system in package (SIP) for a Ku-band four-channel RF transceiver front-end. The SIP adopts the packaging scheme of an inner heat-dissipation gasket and multi-layer substrate in the high temperature co-fired ceramics (HTCC) shell with a metal heat sink at the bottom. The gasket effectively solves the heat-dissipation problem of high-power transceiver chips, and the multi-layer substrate achieves the interconnection between multiple chips. Within the limited size of 14.0 × 14.0 × 2.5 mm3, the SIP integrates five bidirectional amplifier chips, an amplitude-phase control multi-function chip, and two power modulation chips to realize the Ku-band four-channel RF transceiver front-end. Transmitting power over 0.5 W (27dBm) and receiving noise figure of 3.4 dB are achieved in the Ku-band. The efficient heat dissipation, high air tightness, and excellent integration are simultaneously realized in this SIP. The measurement results show that the performance is stable in the receiving and transmitting states, and the SIP based on HTCC technology has specific prospects for radar transceiver application.