Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

• Published in: Micromachines (Basel) Vol. 10; no. 10; p. 663
• Main Authors: Drake, Kolton, Lu, Tonglin, Majumdar, Md, Campbell, Kristy
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 30.09.2019; MDPI
• Subjects: chalcogenide; Chemical elements; Chemical reactions; Copper; electrochemical metallization (ecm); electrochemical metallization cell; Electrodes; ion conduction; Ion sources; memristor; Memristors; Random access memory; self-directed channel (sdc); Silver; Solid solutions; Thin films; United States > US
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi10100663

Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate at temperatures as low as 6 K, whereas Ag-based SDC memristors are damaged if operated below 125 K. It is also observed that Cu reversibly diffuses into the active Ge2Se3 layer during normal device shelf-life, thus changing the state of a Cu-based memristor over time. This was not observed for the Ag-based SDC devices. The response of each device type to sinusoidal excitation is provided and shows that the Cu-based devices exhibit hysteresis lobe collapse at lower frequencies than the Ag-based devices. In addition, the pulsed response of the device types is presented.