Effect of B-site Co substitution on the structure and magnetic properties of nanocrystalline neodymium orthoferrite synthesized by auto-combustion

• Published in: Royal Society open science Vol. 8; no. 2; p. 201883
• Main Authors: Nforna, Edwin Akongnwi, Tsobnang, Patrice Kenfack, Fomekong, Roussin Lontio, Tedjieukeng, Hypolite Mathias Kamta, Lambi, John Ngolui, Ghogomu, Julius Numbonui
• Format: Journal Article
• Language: English
• Published: England The Royal Society 03.02.2021
• Subjects: antiferromagnetic; Chemistry; neodymium orthoferrite; orthorhombic; perovskite; orthorhombic; neodymium orthoferrite; perovskite; antiferromagnetic
• ISSN: 2054-5703; 2054-5703
• DOI: 10.1098/rsos.201883

Samples of cobalt-doped neodymium orthoferrite compounds, NdCo Fe O (0.0 ≤ x ≤ 0.5) were synthesized via glycine auto-combustion between 250 and 300°C and calcined at 500°C for 2 h. X-ray diffraction showed that all compounds had an orthorhombic perovskite structure with space group Pbnm. Increasing cobalt doping gradually reduced the lattice parameters and contracted the unit cell volume. Both X-ray diffraction and scanning electron microscopy showed that the particles were spherical and in the nano-sized range (19-52 nm) with pores between grains. Vibrating sample magnetometry at room temperature indicated that NdFeO has a high coercive field (1950 Oe) and cobalt substitution for iron led to a decrease in the coercive field, saturation and remanent magnetization, which was as a result of decreased magnetic moments in the crystal and reduced canting of the FeO octahedra. The increase in magnetization and coercive fields with increase of Co was connected to the microstructure (bond lengths and angles, defects, pores, grain boundaries) and crystallite size. The compounds NdCo Fe O show antiferromagnetism with weak ferromagnetism due to uncompensated non-collinear moments. These compounds could serve as prototypes for tuning the properties of magnetic materials (ferromagnetic and antiferromagnetic) with potential applications in data storage, logic gates, switches and sensors.