Oxidation at Cs Pre-Adsorbed Si/6H-SiC(0001)-(3 × 3) Reconstructed Surfaces Studied Using Metastable-Induced Electron Spectroscopy

• Published in: E-journal of surface science and nanotechnology Vol. 14; pp. 103 - 106
• Main Authors: Ikari, Tomonori, Nakamura, Takuto, Hirayama, Kaede, Muraoka, Kousuke, Ishii, Junko, Naitoh, Masamichi
• Format: Journal Article
• Language: English; Japanese
• Published: Tokyo The Japan Society of Vacuum and Surface Science 01.01.2016; Japan Science and Technology Agency
• Subjects: Adsorption; Alkali metals; Annealing; Cesium; Electron emission; Electron spectroscopy; Low energy electron diffraction; Metastable-induced electron spectroscopy (MIES); Oxidation; Oxygen; Photoelectrons; Silicon carbide; Silicon dioxide; Spectrum analysis; Surface chemistry; Surface electronic phenomena (work function)
• ISSN: 1348-0391; 1348-0391
• DOI: 10.1380/ejssnt.2016.103

A Si-covered 6H-SiC(0001) surface was transformed from a Si-rich to C-rich one with increasing annealing temperature. An alkali metal is well known for promoting oxidation. We studied the oxidation to Cs pre-adsorption on a 6H-SiC(0001)-(3 × 3) reconstructed surface using metastable-induced electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), and low-energy electron diffraction (LEED). The (3 × 3) reconstructed surfaces was adsorbed Cs and exposed oxygen at room temperature. The MIES results show that the intensity of electron emission induced Cs6s increased with Cs evaporation. For the oxygen-exposed Cs/SiC surface, the emission intensity of the Cs6s-induced peak rapidly decreased and a dissociated adsorption oxygen-induced peak appeared. When the oxygen-adsorbed Cs/SiC(0001) surface was annealed until 800°C, Cs atoms were desorbed from the surface and O bonded with Si, forming SiO2. [DOI: 10.1380/ejssnt.2016.103]