Investigation of Defect Free SiGe Nanowire Biosensor Modified by Dual Plasma Technology

Semiconductor nanowires (NWs) have been extensively investigated and discussed in various fields due to their unique physical properties. In this paper, we successfully produce SiGe NWs biosensor by VLSI technology. We propose the dual plasma technology with CF4 plasma pre-treatment and N2 plasma po...

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Bibliographic Details
Published inJournal of nanoscience and nanotechnology Vol. 16; no. 2; p. 1454
Main Authors Chen, Yi-Ming, Chang, Tai-Yuan, Lai, Chiung-Hui, Chang, Kow-Ming, Chen, Chu-Feng, Lai, Yi-Lung, Whang, Allen Jong-Woei, Lai, Hui-Lung, Hsu, Terng-Ren
Format Journal Article
LanguageEnglish
Published United States 01.02.2016
Subjects
Biosensing Techniques
Germanium - chemistry
Nanowires - chemistry
Plasma Gases - chemistry
Silicon Dioxide - chemistry
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Summary:Semiconductor nanowires (NWs) have been extensively investigated and discussed in various fields due to their unique physical properties. In this paper, we successfully produce SiGe NWs biosensor by VLSI technology. We propose the dual plasma technology with CF4 plasma pre-treatment and N2 plasma post-treatment for repairs of defects as well as optimization of SiGe NWs biosensor. The results indicate that sensitivity (S) of the biosensor with dual plasma technology has significantly improved at least 32.8%, suitable for producing industrial SiGe NWs biosensor in the future.
ISSN:1533-4880
1533-4899
DOI:10.1166/jnn.2016.11919