Growth of oxide compounds under dynamic atmosphere composition

• Published in: Journal of crystal growth Vol. 311; no. 3; pp. 534 - 536
• Main Authors: Klimm, D., Ganschow, S., Schulz, D., Bertram, R., Uecker, R., Reiche, P., Fornari, R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 15.01.2009; Elsevier
• Subjects: A1. Phase equilibria; A2. Growth from melt; B1. Oxides; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; 82.33.Pt; 64.75.−g; B1. Oxides; A1. Phase equilibria; A2. Growth from melt; 82.60.Hc; 81.10.−h; Temperature dependence; Gallium oxide; 81.10.-h; Monocrystals; Partial pressure; Valence; Residual impurity; Growth mechanism; 64.75.-g; Zinc oxide; Growth from melt; Gallium selenides
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2008.09.037

Commercially available gases contain residual impurities leading to a background oxygen partial pressure of typically several 10 - 6 bar , independent of temperature. This oxygen partial pressure is inappropriate for the growth of some single crystals where the desired oxidation state possesses a narrow stability field. Equilibrium thermodynamic calculations allow the determination of dynamic atmosphere compositions yielding such self-adjusting and temperature dependent oxygen partial pressures, that crystals like ZnO, Ga 2 O 3 , or Fe 1 - x O can be grown from the melt.