Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor

We report fabrication, measurement and simulation of silicon single-electron-transistors made on silicon-on-insulator wafers. At T-2 K, these devices showed clear Coulomb blockade structures. An external perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to pr...

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Published inJournal of nanoscience and nanotechnology Vol. 12; no. 3; p. 2509
Main Authors Aravind, K, Lin, M C, Ho, I L, Wu, C S, Kuo, Watson, Kuan, C H, Chang-Liao, K S, Chen, C D
Format Journal Article
LanguageEnglish
Published United States 01.03.2012
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Summary:We report fabrication, measurement and simulation of silicon single-electron-transistors made on silicon-on-insulator wafers. At T-2 K, these devices showed clear Coulomb blockade structures. An external perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to predict the presence of two laterally coupled quantum dots in the narrow constriction between the source-drain electrodes. The proposed model and measured experimental data were consistently explained using numerical simulations.
ISSN:1533-4880
DOI:10.1166/jnn.2012.5797