Status and perspectives of the ammonothermal growth of GaN substrates
The seeded growth of GaN by the ammonothermal method is updated. By using a polycrystalline GaN nutrient together with higher concentration of NaNH 2, we have attained a long-term ammonothermal growth to 90 days. The as-grown crystal showed an improved structural quality to the previously reported G...
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Published in | Journal of crystal growth Vol. 310; no. 5; pp. 876 - 880 |
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Main Authors | , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.03.2008
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The seeded growth of GaN by the ammonothermal method is updated. By using a polycrystalline GaN nutrient together with higher concentration of NaNH
2, we have attained a long-term ammonothermal growth to 90 days. The as-grown crystal showed an improved structural quality to the previously reported GaN bulk crystals grown by the seeded ammonothermal growth, demonstrating the feasibility of the ammonothermal method for a high-quality bulk GaN growth. The threading dislocation density estimated by plan-view transmission electron microscopy (TEM) observations was <1×10
6
cm
−2 for the Ga-face and 1×10
7
cm
−2 for the N-face. There was no dislocation generation observed at the interface on the Ga-face although a few dislocations were generated at the interface on the N-face. The chemical etching together with X-ray diffraction measurements revealed macroscopic grains in the grown crystals. |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2007.11.088 |