Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene

• Published in: Journal of physics. Condensed matter Vol. 22; no. 30; p. 302002
• Main Authors: Bjelkevig, Cameron, Mi, Zhou, Xiao, Jie, Dowben, P A, Wang, Lu, Mei, Wai-Ning, Kelber, Jeffry A
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 04.08.2010; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Thin films and multilayers; Photoelectron spectra; Raman spectra; Inverse photoemission spectra; Brillouin zones; Boron nitride; Atomic layer epitaxial growth; CVD; Scanning tunneling microscopy; Electronic structure; Graphene; Density functional method; Scanning tunneling spectroscopy; Effective mass; Heterostructures

A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near...