Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene

• Published in: Journal of physics. Condensed matter Vol. 22; no. 30; p. 302002
• Main Authors: Bjelkevig, Cameron, Mi, Zhou, Xiao, Jie, Dowben, P A, Wang, Lu, Mei, Wai-Ning, Kelber, Jeffry A
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 04.08.2010; Institute of Physics
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Thin films and multilayers; Photoelectron spectra; Raman spectra; Inverse photoemission spectra; Brillouin zones; Boron nitride; Atomic layer epitaxial growth; CVD; Scanning tunneling microscopy; Electronic structure; Graphene; Density functional method; Scanning tunneling spectroscopy; Effective mass; Heterostructures
• ISSN: 0953-8984; 1361-648X
• DOI: 10.1088/0953-8984/22/30/302002

A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied σ*(Γ(1) +) band dispersion yields an effective mass of 0.05 m(e) for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.