A 4H-SiC high-power-density VJFET as controlled current limiter

• Published in: IEEE transactions on industry applications Vol. 39; no. 5; pp. 1508 - 1513
• Main Authors: Tournier, D., Godignon, P., Montserrat, J., Planson, D., Raynaud, C., Chante, J.P., de Palma, J.-F., Sarrus, F.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE); Institute of Electrical and Electronics Engineers
• Subjects: Bidirectional; Circuit breakers; Constraining; Current limiters; Devices; Electric potential; Electric power; Electric power generation; Electric resistance; Electrical resistance measurement; Engineering Sciences; Fault current limiters; Fuses; Power system protection; Power system simulation; Semiconductors; Simulation; Switches; Switching circuits; high voltage; JFET; serial protection device; command integration; current limiter
• ISSN: 0093-9994; 1939-9367
• DOI: 10.1109/TIA.2003.816465

Considering fault current limiters for serial protection, many structures exist, from regulation to other complex systems such as circuit breakers, mechanical switches, or more conventional fuses. Up to now, only a few semiconductor current limiter structures have been described in the literature. Although current-regulative diode components already exist, their voltage and current capabilities (V/sub BR/=100 V, I/sub max/=10 mA), do not allow their use in power systems. This paper presents both simulation study and experimental results of a bidirectional current limiter structure based on a vertical SiC VJFET. The device was designed for serial protection in order to limit I/sup 2/t value. Finite-element simulations were performed with ISE-TCAD software to design the device and evaluate its static electrical characteristics. Then, dynamic simulations were performed to underline current reduction ability and power losses adjustment by gate resistance value optimization. Finally, electrical characterization for a unidirectional and a bidirectional device were done up to 400 V. The measured specific on resistance R/sub ON/ is in the range of 176 m/spl Omega//spl middot/cm/sup 2/. Limiting capabilities have also been measured for a bidirectional device made of two unidirectional devices connected head to tail. The highest breakdown voltage value in "current limiting state" was measured to be /spl sim/810 V, corresponding to a high power density of 140 kW/cm/sup 2/.