Selective Transfer of Si Thin-Film Microchips by SiO2 Terraces on Host Chips for Fluidic Self-Assembly

• Published in: Applied Mechanics Vol. 2; no. 1; pp. 16 - 24
• Main Authors: Fujita, Yutaka, Ishihara, Shoji, Nakashima, Yuki, Nishigaya, Kosuke, Tanabe, Katsuaki
• Format: Journal Article
• Language: English
• Published: Zwijnaarde MDPI AG 01.03.2021
• Subjects: Boron; Etching; Ethanol; integration; layer transfer; self-assembly; semiconductor; Semiconductors; silicon; thin film; Japan
• ISSN: 2673-3161; 2673-3161
• DOI: 10.3390/applmech2010002

Fluidic self-assembly is a versatile on-chip integration method. In this scheme, a large number of semiconductor microchips are spontaneously deposited onto a host chip. The host chip typically comprises a Si substrate with an array of pockets at the designated microchip placement sites. In this study, we installed an SiO2 layer on the terrace region between the pockets of the host chip, to reduce the attraction with the Si microchips. By the SiO2-topped terrace scheme, we demonstrated a significant enhancement in the deposition selectivity of the Si microchips to the pocket sites, relative to the case of the conventional Si-only host chip. We theoretically explained the deposition selectivity enhancement in terms of the van der Waals interaction. Furthermore, our quantitative analysis implicated a potential applicability of the commonly used interlayer dielectrics, such as HfO2, silsesquioxanes, and allyl ethers, directly as the terrace component.