Recent Progress in Gas Sensors Based on P3HT Polymer Field-Effect Transistors

• Published in: Sensors (Basel, Switzerland) Vol. 23; no. 19; p. 8309
• Main Authors: Cheng, Si, Wang, Yifan, Zhang, Ruishi, Wang, Hongjiao, Sun, Chenfang, Wang, Tie
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01.10.2023; MDPI
• Subjects: Book publishing; Electrodes; Field-effect transistors; gas sensors; Gases; organic bioelectronics; organic semiconductors; polymer field-effect transistor; Polymers; Review; Semiconductors; Sensors; Shirakawa, Hideki; Transistors; United States
• ISSN: 1424-8220; 1424-8220
• DOI: 10.3390/s23198309

In recent decades, the rapid development of the global economy has led to a substantial increase in energy consumption, subsequently resulting in the emission of a significant quantity of toxic gases into the environment. So far, gas sensors based on polymer field-effect transistors (PFETs), a highly practical and cost-efficient strategy, have garnered considerable attention, primarily attributed to their inherent advantages of offering a plethora of material choices, robust flexibility, and cost-effectiveness. Notably, the development of functional organic semiconductors (OSCs), such as poly(3-hexylthiophene-2,5-diyl) (P3HT), has been the subject of extensive scholarly investigation in recent years due to its widespread availability and remarkable sensing characteristics. This paper provides an exhaustive overview encompassing the production, functionalization strategies, and practical applications of gas sensors incorporating P3HT as the OSC layer. The exceptional sensing attributes and wide-ranging utility of P3HT position it as a promising candidate for improving PFET-based gas sensors.