Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

• Published in: Journal of materials science. Materials in electronics Vol. 27; no. 2; pp. 2004 - 2013
• Main Authors: Dai, Yiquan, Li, Shuiming, Gao, Hongwei, Wang, Weihui, Sun, Qian, Peng, Qing, Gui, Chengqun, Qian, Zhengfang, Liu, Sheng
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.02.2016; Springer Nature B.V
• Subjects: Aluminum nitride; Characterization and Evaluation of Materials; Chemistry and Materials Science; Devices; Film growth; Gallium nitrides; Materials Science; Mathematical models; Nitrides; Optical and Electronic Materials; Silicon substrates; Stresses; Thick Substrate; Residual Stress; High Temperature Part; Edge Point; Gallium Nitride
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-015-3984-1

We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed from Raman frequency shifts in experiments show excellent agreement with the stresses from finite element modeling simulations. The interaction force mechanisms and the impact factors are compared. The analysis provides an insight in understanding the defect behaviors in film growth. Our model could be useful in the evaluation of the residual stresses and deformations in film growth control, post thermal process in device manufacture, packaging, and reliability estimation.