Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation

• Published in: Nanoscale research letters Vol. 5; no. 12; pp. 1901 - 1904
• Main Authors: Konishi, Tomoya, Tsukamoto, Shiro
• Format: Journal Article
• Language: English
• Published: New York Springer New York 24.08.2010; Springer
• Subjects: 8th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces; Chemistry and Materials Science; Materials Science; Molecular Medicine; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Special Issue; Special Issue Article; Wetting layer; Surface reconstruction; Quantum dot; Spatial point pattern; InAs
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1007/s11671-010-9754-3

Surface of an InAs wetting layer on GaAs(001) preceding InAs quantum dot (QD) formation was observed at 300°C with in situ scanning tunneling microscopy (STM). Domains of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions were located in the STM image. The density of each surface reconstruction domain was comparable to that of subsequently nucleated QD precursors. The distribution of the domains was statistically investigated in terms of spatial point patterns. It was found that the domains were distributed in an ordered pattern rather than a random pattern. It implied the possibility that QD nucleation sites are related to the surface reconstruction domains.